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2014-05-14

STMicroelectronics: Samsung and STMicroelectronics Sign Strategic Agreement to Expand 28nm FD-SOI Technology

Foundry and license agreement ensures multi-source availability of
28nm
FD-SOI technology for faster, cooler and simpler semiconductor devices

Seoul and Geneva, M
ay
14
, 2014 - STMicroelectronics (NYSE: STM)
, a global semiconductor leader serving customers across the spectrum of
electronics applications, andSamsung Electronics Co., Ltd.
, a global leader in advanced semiconductor solutions, today announced the
signing of a comprehensive agreement on 28nm Fully Depleted
Silicon-on-Insulator (FD-SOI) technology for multi-source manufacturing
collaboration.

The licensing accord provides customers with advanced manufacturing solutions
from Samsung's state-of-the-art 300mm facilities and assures the industry of
high-volume production for ST's FD-SOI technology. FD-SOI technology at 28nm
delivers faster, cooler, and simpler semiconductor devices to meet the
continuing demand for higher-performance, lower-power systems-on-chips for
next-generation electronic products, such as mobile and consumer
applications.

The agreement, on 28nm FD-SOI technology, encompasses ST's fully developed
process technology and design enablement ecosystem. ST has already proven the
speed-power and simplicity benefits of 28nm FD-SOI and continues to build
design interest and momentum. The agreement complements ST's advanced 28nm
FD-SOI manufacturing capabilities at its 300mm facility in Crolles, France,
ensuring a multi-source option for 28nm FD-SOI products and providing
customers with the benefit of both Samsung's and ST's deep experience and
comprehensive knowledge of high-volume manufacturing technology. The Samsung
28nm FD-SOI process will be qualified in early 2015 for volume production.

"Building upon the existing solid relationship between ST and Samsung within
the framework of the International Semiconductor Development Alliance, this
agreement further strengthens our cooperation by extending it to 28nm FD-SOI,
while expanding the ecosystem and augmenting fab capacity for ST and the
entire electronics industry. Moreover, the agreement confirms and strengthens
further the business momentum that we have experienced on this technology
during the past quarters through many customers and project engagements in
our Embedded Processing Solutions segment" said Jean-Marc Chery, Chief
Operating Officer, STMicroelectronics. "We foresee further expansion of the
28nm FD-SOI ecosystem, to include the leading EDA and IP suppliers, which
will enrich the IP catalog available for 28nm FD-SOI."

"We are pleased to announce this 28nm FD-SOI collaboration with ST. This is an
ideal solution for customers looking for extra performance and power
efficiency at the 28nm node without having to migrate to 20nm," said Dr.
Seh-Woong Jeong, executive vice president of System LSI Business, Samsung
Electronics. "28nm process technology is a highly productive process
technology and expected to have a long life span based on well-established
manufacturing capabilities. By adding FD-SOI to our technology portfolio,
Samsung provides a full-spectrum of 28nm process offerings for our customers'
success."

Technical Notes for Editors:

FD-SOI technology is the result of a long history of research and development
in the French Grenoble technology cluster among ST, CEA-Leti, Soitec, as well
as other partners. It is particularly well suited for markets requiring power
efficiency and performance with a controlled cost of ownership. The
semiconductor process technology effectively extends Moore's law[1]by
offering an evolutionary upgrade to traditional planar semiconductor process
technology. Unlike alternate manufacturing processes, FD-SOI benefits from
the continuation of existing design flows, a wide array of Electronic Design
Automation software, and currently installed manufacturing equipment. In
particular, ST's FD-SOI technology[2]delivers the best balance of faster
performance and cooler operating temperatures while protecting existing
investments in manufacturing tools and equipment. On top of leveraging
existing design flows and manufacturing equipment, the technology will
significantly reduce process complexity.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in technology, opening new
possibilities for people everywhere. Through relentless innovation and
discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs,
cameras, home appliances, printers, LTE systems, medical devices,
semiconductors and LED solutions. We employ 286,000 people across 80
countries with annual sales of US$216.7 billion. To discover more, please
visit www.samsung.com.

* Editors' Note: Samsung Electronics' Foundry business is dedicated to
support fabless and IDM semiconductor companies offering full service
solutions encompassing design kits and proven IP to fully turnkey
manufacturing to achieve market success with advanced IC designs. For more
information, please visit www.samsung.com/Foundry

About STMicroelectronics

ST is a global leader in the semiconductor market serving customers across the
spectrum of sense and power technologies and multimedia convergence
applications. From energy management and savings to trust and data security,
from healthcare and wellness to smart consumer devices, in the home, car and
office, at work and at play, ST is found everywhere microelectronics make a
positive and innovative contribution to people's life. By getting more from
technology to get more from life, ST stands for life.augmented.

In 2013, the Company's net revenues were $8.08 billion. Further information on
ST can be found at www.st.com.

For further information, please contact:

Samsung

MEDIA RELATIONS:

Lisa Warren-Plungy
Samsung Semiconductor
Tel: +1 408-544-5377
lwarrenplungy@ssi.samsung.comSTMicroelectronics

INVESTOR RELATIONS:
Tait Sorensen
Group VP, Investor Relations
Tel: +1 602 485 2064
tait.sorensen@st.com

MEDIA RELATIONS:

Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
Michael.Markowitz@st.com
---------------------------------------[1]The observation made by Gordon E. Moore in a 1965 paper ("Cramming more
components onto integrated circuits," Electronics Magazine) that the number
of transistors on integrated circuits doubles approximately every two years.
[2]ST has developed and commercialized Ultra-Thin Buried Oxide (UTBB) FD-SOI,
whose benefits are well described in a2012 paperby Thomas Skotnicki, Franck
Arnaud, and Olivier Faynot.

FDSOI ST and Samsung
http://hugin.info/152740/R/1785298/612098.pdf

---------------------------------------

This announcement is distributed by NASDAQ OMX Corporate Solutions on behalf of NASDAQ OMX Corporate Solutions clients.
The issuer of this announcement warrants that they are solely responsible for the content, accuracy and originality of the information contained therein.
Source: STMicroelectronics via Globenewswire

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