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2015-12-15

Applied Materials: Applied Materials' Chorng-Ping Chang Named 2016 IEEE Fellow

* Recognized for outstanding technical contributions in two of the most
challenging areas of CMOS scaling

SANTA CLARA, Calif., December 15, 2015 - Applied Materials, Inc. today
announced that Dr. Chorng-Ping Chang, who leads the company's strategic
external research with universities and industry consortia, has been named a
2016 IEEE Fellow. Dr. Chang is being recognized for his contributions to
"replacement gate and shallow trench isolation for CMOS technology," which
have had a profound impact on the advancement of integrated circuit (IC)
fabrication. The IEEE Grade of Fellow is conferred by the IEEE Board of
Directors upon a person with an outstanding record of accomplishments in any
of the IEEE fields of interest. IEEE Fellow is the highest grade of
membership and is recognized by the technical community as a prestigious
honor and an important career achievement. The total number selected in any
one year cannot exceed one-tenth of one-percent of the total voting
membership.

"Chorng-Ping's brilliant work helped the industry adopt novel methods in CMOS
scaling and made important contributions to the performance, functionality
and size of the electronic products we use every day," said Dr. Om Nalamasu,
senior vice president and CTO of Applied Materials. "I commend him on this
well-deserved honor and for his efforts leading Applied Materials'
collaborations with universities and consortia."

Dr. Chang's outstanding technical contributions and extensive semiconductor
industry community service span nearly three decades. While working at Bell
Laboratories he led pioneering research that helped the industry through one
of the most significant transitions in the history of CMOS technology - the
shift from the gate-first to the gate-last (replacement gate) process. His
work on extending the use of replacement gate technology continued at Applied
Materials, and today virtually all state-of-the-art CMOS logic devices,
including FinFET transistors, use replacement gate technology. In addition,
early on in his career Dr. Chang made pivotal contributions in deposition,
etching and advanced plasma processing technologies.

Another critical area where Dr. Chang made significant contributions is
advanced shallow trench isolation (STI). He led an early detailed study that
demonstrated how changing the shape of the top trench corners helped resolve
serious issues of defect density, junction leakage and device threshold
voltage control. This research had a long-term impact on the robustness and
extendibility of STI in mainstream CMOS manufacturing, to the extent that
major CMOS process technologies introduced in recent years have used STI
corner engineering techniques developed by Dr. Chang and his team.

Dr. Chang has served the IEEE community in several facets throughout his
career, including as editor of IEEE Electron Device Letters for 12 years. He
has also been a member of the program committees of various international
technical conferences on IC technology, and is currently the U.S. Chair of
the International Technology Roadmap for Semiconductors (ITRS) Process,
Integration, Devices and Structures Chapter. Dr. Chang holds a bachelor's
degree from National Tsing Hua University and a Ph.D. in engineering from the
University of California, Berkeley.

Applied Materials, Inc. (Nasdaq:AMAT) is the global leader in materials
engineering solutions for the semiconductor, flat panel display and solar
photovoltaic industries. Our technologies help make innovations like
smartphones, flat screen TVs and solar panels more affordable and accessible
to consumers and businesses around the world. Learn more
atwww.appliedmaterials.com.

# # #

Contact:

Kevin Winston(editorial/media) 408.235.4498

Michael Sullivan(financial community) 408.986.7977

PHOTO: Dr. Chorng-Ping Chang, Applied Materials
http://hugin.info/143724/R/1973475/721942.jpg

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This announcement is distributed by NASDAQ OMX Corporate Solutions on behalf of NASDAQ OMX Corporate Solutions clients.
The issuer of this announcement warrants that they are solely responsible for the content, accuracy and originality of the information contained therein.
Source: Applied Materials via Globenewswire

HUG#1973475

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