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2016-05-16

STMicroelectronics: STMicroelectronics Reveals Advanced Silicon-Carbide Power Devices to Accelerate Automotive Electrification

* Complete set of devices allows full conversion of auto power modules to
silicon carbide (SiC) for greater vehicle range, convenience, and
reliability
* Advanced 6-inch wafer capability and process to bring superior SiC offer to
carmakers and automotive suppliers
* AEC-Q101 qualification program to complete in early 2017, ready for new OEM
product launches

Geneva, May 16, 2016 - STMicroelectronics (NYSE: STM)
, a global semiconductor leader serving customers across the spectrum of
electronic applications, has announced advanced high-efficiency power
semiconductors for Hybrid and Electric Vehicles (EVs) with a timetable for
qualification to the automotive quality standard AEC-Q101.

In EVs and hybrids, where better electrical efficiency means greater mileage,
ST's latest silicon-carbide (SiC) technology enables auto makers to create
vehicles that travel further, recharge faster, and fit better into owners'
lives. A leader in silicon carbide, ST is among the first to present
new-generation rectifiers and MOSFETs for high-voltage power modules and
discrete solutions addressing all the vehicle's main electrical blocks. These
include the traction inverter, on-board battery charger, and auxiliary DC-DC
converter.

Today's power modules typically rely on standard silicon diodes and Insulated
Gate Bipolar Transistors (IGBTs). Silicon carbide is a newer, wide-bandgap
technology that allows smaller device geometries capable of operating well
above the 400V range of today's electric and hybrid drivetrains. The smaller
SiC diode and transistor structures present lower internal resistance and
respond more quickly than standard silicon devices, which minimize energy
losses and allow associated components to be smaller, saving even more size
and weight.

"Major carmakers and automotive Tier-1s are now committing to silicon-carbide
technology for future product development to leverage its higher aggregate
efficiency compared to standard silicon in a wide range of operating
scenarios," said Mario Aleo, Group Vice President and General Manager, Power
Transistor Division, STMicroelectronics. "Our SiC devices have demonstrated
superior performance and reached an advanced stage of qualification as we
support customers preparing to launch new products in the 2017 timeframe."

ST has been among the first companies to producesilicon-carbide high-voltage
MOSFETs, with its first 1200V SiC MOSFET introduced back in 2014, achieving
industry-leading 200°C rating for more efficient and simplified designs.

The Company is using the industry's most advanced processes to fabricate SiC
MOSFETs and diodes on 4-inch wafers. In order to drive down the manufacturing
costs, improve the quality, and deliver the large volumes demanded by the
auto industry, ST is scaling up its production of SiC MOSFETs and diodes to
6-inch wafers, and is on schedule to complete both conversions by the end of
2016.

ST has already qualified its650V SiC diodes to AEC-Q101, and will complete
qualification of the latest 650V SiC MOSFETs and 1200V SiC diodes in early
2017. The qualification of the new-generation 1200V SiC MOSFETs will be
completed by the end of 2017.

TheSTPSC20065WY650V SiC diode is in full production now in DO-247. The range
also includes lower current ratings and smaller form-factor TO-220 package
options. TheSTPSC10H12D1200V SiC diode is sampling now to lead customers in
the TO-220AC package and goes to production this month, with volume
production of the automotive-grade version planned for Q4 2016. Multiple
current ratings from 6A to 20A and packaging options will also be available.

TheSCTW100N65G2AG650V SiC MOSFET is sampling now to lead customers in the
HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact
designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified
to AEC-Q101 in H1 2017.

For further information on ST's portfolio of SiC devices please refer
towww.st.com/sicmosfor MOSFETs orwww.st.com/auto-sic-diodesfor diodes.

Technical Notes:

Using ST's 650V SCTW100N65G2AG SiC MOSFET in the EV/HEV main inverter (typical
frequencies up to 20kHz) increases the efficiency compared with an equivalent
IGBT solution by up to 3%. This dramatic improvement translates into longer
battery life and autonomy, and a smaller and lighter power unit with lower
cooling requirements. The SiC MOSFET reduces power losses in the inverter (up
to 80% lower at light/medium load), enabling designers to use higher
switching frequencies for more compact designs. Additionally, a SiC-based
solution offers highly robust intrinsic-body diodes, eliminating the need for
the freewheeling diodes necessary with IGBTs, further saving cost, size, and
weight.

In other EV/HEV applications like the OBC (On-Board Charger) and DC-DC
Converter, the inherently faster switching performance of SiC, compared with
standard silicon devices, allows much higher switching frequencies, thus
reducing the size of passive components. Furthermore, the SiC MOSFET
increases design flexibility as it can be used in diverse topologies.

Advances such as these are helping to propel the state of the art in hybrid
and electric vehicles. Moreover, ST's advanced manufacturing processes
deliver advantages over competing SiC devices, such as superior stability
over a wide operating temperature range, which means more dependable vehicle
performance and range.

ST's SiC MOSFETs, housed in a proprietary high-thermal-efficiency HiP247(TM)
package, also feature the industry's highest junction-temperature rating of
200°C and show a very small variation of the on-state resistance even at high
temperatures. This leads to higher system efficiency, which reduces cooling
requirements and PCB form factors simplifying thermal management.

The new 650V and 1200V SiC diodes from ST have the best-in-class forward
voltage drop (VF) among all devices in the market today, which minimizes the
amount of energy dissipated as heat by EV/HEV power converters. These
excellent thermal properties help to further improve overall vehicle
reliability.

About STMicroelectronics

ST is a global semiconductor leader delivering intelligent and
energy-efficient products and solutions that power the electronics at the
heart of everyday life. ST's products are found everywhere today, and
together with our customers, we are enabling smarter driving and smarter
factories, cities and homes, along with the next generation of mobile and
Internet of Things devices.

By getting more from technology to get more from life, ST stands for
life.augmented.

In 2015, the Company's net revenues were $6.90 billion, serving more than
100,000 customers worldwide. Further information can be found atwww.st.com.

PR Contact
STMicroelectronics

Michael Markowitz
Director Technical Media Relations
+1 781 591 0354
michael.markowitz@st.comSTMicro SiC Devices for Automotive
http://hugin.info/152740/R/2012943/745853.pdf

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The issuer of this announcement warrants that they are solely responsible for the content, accuracy and originality of the information contained therein.
Source: STMicroelectronics via Globenewswire

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